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45.00    -4.35 (-8.81%)
Bid:
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Spread: 0.35 (0.778%)
Market Cap: £590.66m
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Contract Win

17 Mar 2008 13:00

IQE PLC17 March 2008 17 March 2008. IQE plc IQE wins major order for Gallium Nitride based wafer products. IQE plc (AIM: IQE, "the Group" ) the leading manufacturer of advancedsemiconductor wafers to the global semiconductor industry, has won a major orderfrom leading US semiconductor manufacturer TriQuint Semiconductor (Nasdaq: TQNT)for IQE's Gallium Nitride (GaN) wafer products. This is the Group's largestcommercial order for GaN products to date. The wafers will be manufactured atits New Jersey operation and the order is scheduled for delivery throughout2008. TriQuint Semiconductor will use IQE's GaN based HEMT (high electron mobilitytransistor) wafers to support its development of smaller, more durable andhighly efficient power amplifiers for new commercial and military communicationsproducts. The wafers will be used in both on-going research and developmentefforts and the roll-out of TriQuint's new products this year. Gallium Nitride power amplifiers offer much higher power capability, efficiencyand greater protection against breakdown than existing solid-state amplifiertechnologies commonly used today, providing significant benefits in terms ofboth performance and lower overall system costs. Tony Balistreri, Research and Development Manager at TriQuint Semiconductorcommented: "IQE's established track record in providing TriQuint with reliable,high-quality products was a key factor in selecting them for producing anddelivering a range of advanced GaN epitaxial materials. We've developed a closeworking relationship with IQE throughout the development phase of our GaNprogram and this latest order is based on their solid support of us throughoutthat relationship." Mr Alex Ceruzzi, VP and General Manager of IQE's New Jersey facility commented: "This is a key order for us particularly as our broad product portfolio, whichranges from high volume HEMTs, HBTs and BiFETs to emerging technologies such asgallium nitride epitaxial wafers, provides our customers with a one-stop shopfor all their advanced materials needs. We appreciate the trust TriQuint hasplaced in us to meet their needs." IQE RF are the leading GaN HEMT foundry for DARPA's Microsystems Technology(MTO) programs. For further information contact IQE plc : Chris Meadows +44 (0)29 2083 9400 College Hill Adrian Duffield/Ben Way +44 (0)20 7457 2020 NOTE TO EDITORS ABOUT IQE www.iqep.com IQE plc is the leading global supplier of advanced semiconductor wafers withproducts that cover a diverse range of applications. It is able to provide a'one stop shop' for the wafer needs of the world's leading compoundsemiconductor manufacturers, who in turn use these wafers to make the chipswhich form the key components of virtually every high technology system. IQE has particular focus on the growing global wireless sector for applicationsincluding; mobile handsets, wireless infrastructure, Wi-Fi, WiMAX, basestations, GPS and satellite communications; as well as for the opticalcommunication sector including; optical storage (CD, DVD), laser optical mice,laser printers & photocopiers, thermal imagers, leading-edge medical products,bar-coding, high efficiency LEDs and advanced solar cells. The manufacturers of these chips are increasingly seeking to outsource waferproduction to specialist foundries such as IQE in order to reduce overall wafercosts and accelerate time to market. IQE is unique in being able to supplywafers using all of the leading crystal growth technology platforms includingMetal Organic Vapour Phase Epitaxy (MOVPE) and Molecular Beam Epitaxy (MBE) andthe Group is able to leverage its global purchasing volumes to reduce the costof raw materials. IQE also provides bespoke R&D services to deliver customized materials forspecific applications and offers specialist technical staff to manufacture tospecification either at its own facilities or on the customer's own sites. Thisis backed by a strategy of duplicating each key product processes over multiplesites to assure customers of security of supply as well as provide compellingcustomer benefits in terms of flexibility and predictability of cost, therebysignificantly reducing operating risk. IQE operates six manufacturing facilities; two in Cardiff and one in MiltonKeynes in the UK; two more in Bethlehem, Pennsylvania and Somerset, New Jerseyin the USA; and its most recent acquisition in Singapore. The Group also has 11sales offices located in major economic centres worldwide. ABOUT TRIQUINT www.triquint.com Founded in 1985, we "Connect the Digital World to the Global Network"(TM) bysupplying high-performance RF modules, components and foundry services to theworld's leading communications companies. Specifically, TriQuint suppliesproducts to four out of the top five cellular handset manufacturers, and is aleading gallium arsenide (GaAs) supplier to major defense and space contractors. TriQuint creates standard and custom products using advanced processes thatinclude gallium arsenide, surface acoustic wave (SAW) and bulk acoustic wave(BAW) technologies to serve diverse markets including wireless handsets, basestations, broadband communications and military. TriQuint is also leadresearcher in a 3-year DARPA program to develop advanced gallium nitride (GaN)amplifiers. TriQuint, as named by Strategy Analytics in August 2007, is thenumber-three worldwide leader in GaAs devices and the world's largest commercialGaAs foundry. TriQuint has ISO9001 certified manufacturing facilities inOregon, Texas, and Florida and a production plant in Costa Rica; design centersare located in North America and Germany. Visit TriQuint at www.triquint.com/rfto register for our newsletters. ABOUT Gallium Nitride Power Amplifiers Commercial interest in gallium nitride amplifier technology is based on its keybenefits including the ability to operate more efficiently and withsubstantially greater power density (more wattage per square millimeter ofsurface area) compared to other commonly used solid-state amplifiertechnologies. These factors enable the development of more efficient, smalleramplifiers capable of operating at higher system voltages with superiorresistance to breakdown (failure occurring due to spikes in current). Thesebenefits lead to better performance and lower overall system costs for thecustomer. DARPA is the US Government Defense Advanced Research Projects Agency This information is provided by RNS The company news service from the London Stock Exchange
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